V. Ganeshan

V. Ganeshan
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V. Ganeshan

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Physics - Materials Science (2)

Publications Authored By V. Ganeshan

Structural, resistivity, thermoelectric power and magneto-transport properties of Cu doped Bi2Te3 topological insulators have been investigated. The occurrence of the tuning of charge carriers from n type to p type by Cu doping at Te sites of Bi2Te3 is observed both from Hall effect and thermoelectric power measurements. Carrier mobility decreases with the doping of Cu which provides evidence of the movement of Fermi level from bulk conduction band to the bulk valence band. Read More

For pyroelectric detector application materials should have low dielectric constant, high pyroelectric coefficient, large non volatile polarization at small applied electric field and low specific heat. Large field (greater than 1200kV/cm) is need to pole ferroelectric polymer poly (vinylidene fluoride) (PVDF) and it has low sensitivity compared to other pyroelectric materials. To increase non volatile polarization at low poling field and to increase pyroelectric coefficient, LiTaO3 (LT) nano particles were added to PVDF matrix to make LT/PVDF composite. Read More