P. Healey

P. Healey
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Physics - Materials Science (2)
 
Physics - Mesoscopic Systems and Quantum Hall Effect (1)
 
High Energy Physics - Experiment (1)
 
Physics - Instrumentation and Detectors (1)

Publications Authored By P. Healey

2016Dec
Authors: MicroBooNE Collaboration, R. Acciarri, C. Adams, R. An, A. Aparicio, S. Aponte, J. Asaadi, M. Auger, N. Ayoub, L. Bagby, B. Baller, R. Barger, G. Barr, M. Bass, F. Bay, K. Biery, M. Bishai, A. Blake, V. Bocean, D. Boehnlein, V. D. Bogert, T. Bolton, L. Bugel, C. Callahan, L. Camilleri, D. Caratelli, B. Carls, R. Castillo Fernandez, F. Cavanna, S. Chappa, H. Chen, K. Chen, C. Y. Chi, C. S. Chiu, E. Church, D. Cianci, G. H. Collin, J. M. Conrad, M. Convery, J. Cornele, P. Cowan, J. I. Crespo-Anadon, G. Crutcher, C. Darve, R. Davis, M. Del Tutto, D. Devitt, S. Duffin, S. Dytman, B. Eberly, A. Ereditato, D. Erickson, L. Escudero Sanchez, J. Esquivel, S. Farooq, J. Farrell, D. Featherston, B. T. Fleming, W. Foreman, A. P. Furmanski, V. Genty, M. Geynisman, D. Goeldi, B. Goff, S. Gollapinni, N. Graf, E. Gramellini, J. Green, A. Greene, H. Greenlee, T. Griffin, R. Grosso, R. Guenette, A. Hackenburg, R. Haenni, P. Hamilton, P. Healey, O. Hen, E. Henderson, J. Hewes, C. Hill, K. Hill, L. Himes, J. Ho, G. Horton-Smith, D. Huffman, C. M. Ignarra, C. James, E. James, J. Jan de Vries, W. Jaskierny, C. M. Jen, L. Jiang, B. Johnson, M. Johnson, R. A. Johnson, B. J. P. Jones, J. Joshi, H. Jostlein, D. Kaleko, L. N. Kalousis, G. Karagiorgi, T. Katori, P. Kellogg, W. Ketchum, J. Kilmer, B. King, B. Kirby, M. Kirby, E. Klein, T. Kobilarcik, I. Kreslo, R. Krull, R. Kubinski, G. Lange, F. Lanni, A. Lathrop, A. Laube, W. M. Lee, Y. Li, D. Lissauer, A. Lister, B. R. Littlejohn, S. Lockwitz, D. Lorca, W. C. Louis, G. Lukhanin, M. Luethi, B. Lundberg, X. Luo, G. Mahler, I. Majoros, D. Makowiecki, A. Marchionni, C. Mariani, D. Markley, J. Marshall, D. A. Martinez Caicedo, K. T. McDonald, D. McKee, A. McLean, J. Mead, V. Meddage, T. Miceli, G. B. Mills, W. Miner, J. Moon, M. Mooney, C. D. Moore, Z. Moss, J. Mousseau, R. Murrells, D. Naples, P. Nienaber, B. Norris, N. Norton, J. Nowak, M. OBoyle, T. Olszanowski, O. Palamara, V. Paolone, V. Papavassiliou, S. F. Pate, Z. Pavlovic, R. Pelkey, M. Phipps, S. Pordes, D. Porzio, G. Pulliam, X. Qian, J. L. Raaf, V. Radeka, A. Rafique, R. A Rameika, B. Rebel, R. Rechenmacher, S. Rescia, L. Rochester, C. Rudolf von Rohr, A. Ruga, B. Russell, R. Sanders, W. R. Sands III, M. Sarychev, D. W. Schmitz, A. Schukraft, R. Scott, W. Seligman, M. H. Shaevitz, M. Shoun, J. Sinclair, W. Sippach, T. Smidt, A. Smith, E. L. Snider, M. Soderberg, M. Solano-Gonzalez, S. Soldner-Rembold, S. R. Soleti, J. Sondericker, P. Spentzouris, J. Spitz, J. St. John, T. Strauss, K. Sutton, A. M. Szelc, K. Taheri, N. Tagg, K. Tatum, J. Teng, K. Terao, M. Thomson, C. Thorn, J. Tillman, M. Toups, Y. T. Tsai, S. Tufanli, T. Usher, M. Utes, R. G. Van de Water, C. Vendetta, S. Vergani, E. Voirin, J. Voirin, B. Viren, P. Watkins, M. Weber, T. Wester, J. Weston, D. A. Wickremasinghe, S. Wolbers, T. Wongjirad, K. Woodruff, K. C. Wu, T. Yang, B. Yu, G. P. Zeller, J. Zennamo, C. Zhang, M. Zuckerbrot

This paper describes the design and construction of the MicroBooNE liquid argon time projection chamber and associated systems. MicroBooNE is the first phase of the Short Baseline Neutrino program, located at Fermilab, and will utilize the capabilities of liquid argon detectors to examine a rich assortment of physics topics. In this document details of design specifications, assembly procedures, and acceptance tests are reported. Read More

Graphene is formed on SiC(000-1) surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger electron spectroscopy, scanning Auger microscopy and Raman spectroscopy. Morphology of these films is compared with the graphene films grown on SiC(0001) surfaces (the Si-face). Graphene forms a terraced morphology on the C-face, whereas it forms with a flatter morphology on the Si-face. Read More

This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible alternative to silicon-based electronics. This enthusiasm was spurred by high carbon nanotube carrier mobilities. Read More