Ning Lu - USTC

Ning Lu
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Ning Lu

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Physics - Materials Science (9)
Physics - Mesoscopic Systems and Quantum Hall Effect (5)
Computer Science - Networking and Internet Architecture (2)
Computer Science - Multiagent Systems (1)
Computer Science - Performance (1)
Computer Science - Computational Engineering; Finance; and Science (1)
Nonlinear Sciences - Adaptation and Self-Organizing Systems (1)
Nonlinear Sciences - Chaotic Dynamics (1)
Computer Science - Distributed; Parallel; and Cluster Computing (1)

Publications Authored By Ning Lu

MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE) provides an unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibrium. For a few-layer MoTe2 grown at a moderate rate of $\sim$6 mins per monolayer under varied Te:Mo flux ratio and substrate temperature, the boundary between the 2 phases in MBE grown MoTe2 on CaF2 is characterized using Reflection high-energy electron diffraction (RHEED), Raman spectroscopy and X-ray photoemission spectroscopy (XPS). Read More

With onboard operating systems becoming increasingly common in vehicles, the real-time broadband infotainment and Intelligent Transportation System (ITS) service applications in fast-motion vehicles become ever demanding, which are highly expected to significantly improve the efficiency and safety of our daily on-road lives. The emerging ITS and vehicular applications, e.g. Read More

Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homo-junctions. Herein, we propose an effective strategy for doping of MoS2 with nitrogen through a remote N2 plasma surface treatment. By monitoring the surface chemistry of MoS2 upon N2 plasma exposure using in-situ X-ray photoelectron spectroscopy, we identified the presence of covalently bonded nitrogen in MoS2, where substitution of the chalcogen sulfur by nitrogen is determined as the doping mechanism. Read More

Heterogeneous Vehicular NETworks (HetVNETs) can meet various quality-of-service (QoS) requirements for intelligent transport system (ITS) services by integrating different access networks coherently. However, the current network architecture for HetVNET cannot efficiently deal with the increasing demands of rapidly changing network landscape. Thanks to the centralization and flexibility of the cloud radio access network (Cloud-RAN), soft-defined networking (SDN) can conveniently be applied to support the dynamic nature of future HetVNET functions and various applications while reducing the operating costs. Read More

Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top of the graphene, such layers were not obtained. Rather, in isolated surface areas, h-BN is found to form micrometer-size islands that substitute for the graphene. Read More

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalocogenides: MoS2, MoSe2, and WSe2.The realization of MoS2-WSe2-Graphene and WSe2-MoSe2-Graphene heterostructures leads toresonant tunneling in an atomically thin stack with spectrally narrow room temperature negative differential resistance characteristics. Read More

We perform a comprehensive first-principles study of the electronic properties of phosphorene nanoribbons, phosphorene nanotubes, multilayer phosphorene, and heterobilayers of phosphorene and two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayer. The tensile strain and electric-field effects on electronic properties of low-dimensional phosphorene nanostructures are also investigated. Our calculations show that zigzag phosphorene nanoribbons (z-PNRs) are metals, regardless of the ribbon width while armchair phosphorene nanoribbons (a-PNRs) are semiconductors with indirect bandgaps and the bandgaps are insensitive to variation of the ribbon width. Read More

We have performed a systematic first-principles study of the effect of tensile strains on the electronic properties of early transition-metal dichalcogenide (TMDC) monolayers MX2 (M = Sc, Ti, Zr, Hf, Ta, Cr; X = S, Se, and Te). Our density-functional theory (DFT) calculations suggest that the tensile strain can significantly affect the electronic properties of many early TMDCs in general and the electronic bandgap in particular. For group IVB TMDCs (TiX2, ZrX2, HfX2), the bandgap increases with the tensile strain, but for ZrX2 and HfX2 (X=S, Se), the bandgap starts to decrease at strain 6% to 8%. Read More

We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX2/MoS2 (M = Mo, Cr, W, Fe, V; X = S, Se). For M = Mo, Cr, W; X=S, Se, all heterobilayers show semiconducting characteristics with an indirect bandgap with the exception of the WSe2/MoS2 heterobilayer which retains the direct-band-gap character of the constituent monolayer. For M = Fe, V; X = S, Se, the MX2/MoS2 heterobilayers exhibit metallic characters. Read More

We report a first-principles study of the electronic structure of functionalized graphene nano-ribbon (aGNRs-f) by organic functional group (CH2C6H5) and find that CH2C6H5 functionalized group does not produce any electronic states in the gap and the band gap is direct. By changing both the density of the organic functional group and the width of the aGNRs-f, a band gap tuning exhibits a fine three family behavior through the side effect. Meanwhile, the carriers at conduction band minimum and valence band maximum are located in both CH2C6H5 and aGNR regions when the density of the CH2C6H5 is big; while they distribute dominantly in aGNR conversely. Read More

Graphene oxide (GO) is an important intermediate to prepare graphene and it is also a versatile material with various applications. However, despite its importance, the detailed structure of GO is still unclear. For example, previous theoretical studies based on energetics have suggested that hydroxyl chain is an important structural motif of GO, which, however, is found to be contrary to nuclear magnetic resonance (NMR) experiment. Read More


Nuclear magnetic resonance (NMR) has been widely used in the graphene oxide (GO) structure study. However, the detailed relationship between its spectroscopic features and the GO structural configuration has remained elusive. Based on first principles $^{13}$C chemical shift calculations using the gauge including projector augmented waves (GIPAW) method, we provide a spectrum-structure connection. Read More

Two dimensional materials are important for electronics applications. A natural way for electronic structure engineering on two dimensional systems is on-plane chemical functionalization. Based on density functional theory, we study the electronic structures of fluorine substituted planar polysilane and graphane. Read More

To study the impacts of price responsive demand on the electric power system requires better load models. This paper discusses the modeling of uncertainties in aggregated thermostatically controlled loads using a state queueing (SQ) model. The cycling times of thermostatically controlled appliances (TCAs) vary with the TCA types and sizes, as well as the ambient temperatures. Read More

The development of cost-effective highperformance parallel computing on multi-processor supercomputers makes it attractive to port excessively time consuming simulation software from personal computers (PC) to super computes. The power distribution system simulator (PDSS) takes a bottom-up approach and simulates load at the appliance level, where detailed thermal models for appliances are used. This approach works well for a small power distribution system consisting of a few thousand appliances. Read More