Jose Avila

Jose Avila
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Jose Avila
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Physics - Materials Science (6)
 
Physics - Mesoscopic Systems and Quantum Hall Effect (6)
 
Physics - Instrumentation and Detectors (2)
 
Physics - Strongly Correlated Electrons (1)
 
Physics - Computational Physics (1)

Publications Authored By Jose Avila

The rhenium-based transition metal dichalcogenides (TMDs) are atypical of the TMD family due to their highly anisotropic crystalline structure and are recognized as promising materials for two dimensional heterostructure devices. The nature of the band gap (direct or indirect) for bulk, few and single layer forms of ReS$_2$ is of particular interest, due to its comparatively weak inter-planar interaction. However, the degree of inter-layer interaction and the question of whether a transition from indirect to direct gap is observed on reducing thickness (as in other TMDs) are controversial. Read More

ReSe2 and ReS2 are unusual compounds amongst the layered transition metal dichalcogenides as a result of their low symmetry, with a characteristic in-plane anisotropy due to in-plane rhenium chains. They preserve inversion symmetry independent of the number of layers and, in contrast to more well-known transition metal dichalcogenides, bulk and few-monolayer Re-TMD compounds have been proposed to behave as electronically and vibrational decoupled layers. Here, we probe for the first time the electronic band structure of bulk ReSe2 by direct nanoscale angle-resolved photoemission spectroscopy. Read More

The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic structure. In trilayer graphene, rhombohedral stacking (ABC) is particularly intriguing, exhibiting a flat band with an electric-field tunable band gap. Such electronic structure is distinct from simple hexagonal stacking (AAA) or typical Bernal stacking (ABA), and is promising for nanoscale electronics, optoelectronics applications. Read More

Material line defects are one-dimensional structures but the search and proof of electron behaviour consistent with the reduced dimension of such defects has been so far unsuccessful. Here we show using angle resolved photoemission spectroscopy that twin-grain boundaries in the layered semiconductor MoSe2 exhibit parabolic metallic bands. The one-dimensional nature is evident from a charge density wave transition, whose periodicity is given by kF/{\pi}, consistent with scanning tunneling microscopy and angle resolved photoemission measurements. Read More

In van der Waals heterostructures, the periodic potential from the Moir\'e superlattice can be used as a control knob to modulate the electronic structure of the constituent materials. Here we present a nanoscale angle-resolved photoemission spectroscopy (Nano-ARPES) study of transferred graphene/h-BN heterostructures with two different stacking angles of 2.4{\deg} and 4. Read More

Graphene and topological insulators (TI) possess two-dimensional Dirac fermions with distinct physical properties. Integrating these two Dirac materials in a single device creates interesting opportunities for exploring new physics of interacting massless Dirac fermions. Here we report on a practical route to experimental fabrication of graphene-Sb2Te3 heterostructure. Read More

The growth of the $\sqrt{3} \times \sqrt{3}$ reconstructed silicene on Ag substrate has been frequently observed in experiments while its atomic structure and formation mechanism is poorly understood. Here by first-principles calculations we show that $\sqrt{3} \times \sqrt{3}$ reconstructed silicene is constituted by dumbbell units of Si atoms arranged in a honeycomb pattern. Our model shows excellent agreement with the experimentally reported lattice constant and STM image. Read More

Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001) layers on Si(001) wafers can be uniformly covered with graphene at temperatures between 800{\deg}C and the melting temperature of Ge. The graphene is closed, with sheet resistivity strongly decreasing with growth temperature, weakly decreasing with the amount of deposited C, and reaching down to 2 kOhm/sq. Read More

As one of the latest beamline built at the SOLEIL synchrotron source, ANTARES beamline offers a spectroscopic non-destructive nano-probe to study advanced materials. This innovative scanning photoemission microscopy combines linear and angle sweeps to perform precise electronic band structure determination by Nano Angle Resolved Photoelectron Spectroscopy (nanoARPES) and chemical imaging by core level detection. The beamline integrates effectively insertion devices and a high transmission beamline optics. Read More

ANTARES beamline (BL), a new soft X-ray scanning photoemission microscope located at the SOLEIL synchrotron storage ring has been recently designed, built and commissioned. The implemented interferometer control allows the accurate measurement of the transverse position of the Fresnel zone plate (FZP) relative to the sample. An effective sample position feedback has been achieved during experiments in static mode, with a fixed FZP position required to perform nano Angle-Resolved Photoelectron Spectroscopy (Nano-ARPES) measurements. Read More

The structural and electronic properties of thermally reduced SrTiO3(100) single crystals have been investigated using a probe with real- and reciprocal-space sensitivity: a synchrotron radiation microsopic setup which offers the possibility of Scanning Photoemission Microscopy and Angle Resolved Photoelectron Spectroscopy (ARPES) down to the nanometric scale. We have spectroscopically imaged the chemical composition of samples which present reproducible and suitable low-energy electron diffraction patterns after following well-established thermal reduction protocols. At the micrometric scale, Ca-rich areas have been directly imaged using high-energy resolution core level photoemission. Read More