Harshad Surdi

Harshad Surdi
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Harshad Surdi

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Physics - Materials Science (3)
Physics - Optics (3)
Physics - Mesoscopic Systems and Quantum Hall Effect (1)
Instrumentation and Methods for Astrophysics (1)

Publications Authored By Harshad Surdi

We report on the development of scalable prototype microwave kinetic inductance detector (MKID) arrays tailored for future multi-kilo-pixel experiments that are designed to simultaneously characterize the polarization properties of both the cosmic microwave background (CMB) and Galactic dust emission. These modular arrays are composed of horn-coupled, polarization-sensitive MKIDs, and each pixel has four detectors: two polarizations in two spectral bands between 125 and 280 GHz. A horn is used to feed each array element, and a planar orthomode transducer, composed of two waveguide probe pairs, separates the incoming light into two linear polarizations. Read More

We report single and multiband linear polarizers for terahertz (THz) frequencies using cut-wire metamaterials (MM). The MMs are designed by finite element method, fabricated by electron beam lithography, and characterized by THz time-domain spectroscopy. The MM unit cells consist of single or multiple length cut-wire pads of gold on semi-insulating Gallium Arsenide for single or multiple band polarizers. Read More

We demonstrate a THz metamaterial with broadband dipole resonance originating due to the hybridization of LC resonances. The structure optimized by finite element method simulations is fabricated by electron beam lithography and characterized by terahertz time-domain spectroscopy. Numerically, we found that when two LC metamaterial resonators are brought together, an electric dipole resonance arises in addition to the LC resonances. Read More

We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C12) ions. With an increase of the irradiation dose from ~1012 /cm2 to ~1015 /cm2 the carrier lifetime of SI-GaAs monotonously decreases to 0. Read More

We demonstrate here an efficient THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters by two orders of magnitude. By irradiating the SI-GaAs substrate with Carbon-ions up to 2 micron deep, we have created lot of defects and decreased the life time of photo-excited carriers inside the substrate. Read More

Indium Sulphide (InS) single crystals are successfully grown by In flux. Single crystal X-ray diffraction shows orthorhombic structure of Pnnm space group. Ellipsometry measurements performed on the (010) oriented crystal exhibit low anisotropy in the 300-1000 nm wavelength range and consequently negligible THz emission is observed. Read More

We study the effect of a surface modification at the interface between metallic electrodes and semiconducting substrate in Semi-Insulating GaAs (SI-GaAs) based photoconductive emitters (PCE) on the emission of Tera-Hertz (THz) radiation. We partially etch out 500 nm thick layer of SI-GaAs in grating like pattern with various periods before the contact deposition. By depositing the electrodes on the patterned surface, the electrodes follow the contour of the grating period. Read More