G. H. Dohler - Max Planck Research Group, Institute of Optics, Information and Photonics, University Erlangen-Nuremberg, Germany

G. H. Dohler
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Name
G. H. Dohler
Affiliation
Max Planck Research Group, Institute of Optics, Information and Photonics, University Erlangen-Nuremberg, Germany
City
Nuremberg
Country
Germany

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Physics - Mesoscopic Systems and Quantum Hall Effect (6)
 
Physics - Materials Science (4)
 
Physics - Optics (2)
 
Physics - Disordered Systems and Neural Networks (1)

Publications Authored By G. H. Dohler

We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C12) ions. With an increase of the irradiation dose from ~1012 /cm2 to ~1015 /cm2 the carrier lifetime of SI-GaAs monotonously decreases to 0. Read More

We study the effect of a surface modification at the interface between metallic electrodes and semiconducting substrate in Semi-Insulating GaAs (SI-GaAs) based photoconductive emitters (PCE) on the emission of Tera-Hertz (THz) radiation. We partially etch out 500 nm thick layer of SI-GaAs in grating like pattern with various periods before the contact deposition. By depositing the electrodes on the patterned surface, the electrodes follow the contour of the grating period. Read More

We present both chip-scale and free space coherent arrays of continuous-wave THz photomixers. By altering the relative phases of the exciting laser signals, the relative THz phase between the array elements can be tuned, allowing for beam steering. The constructive interference of the emission of N elements leads to an increase of the focal intensity by a factor of NxN while reducing the beam width by ~1/N, below the diffraction limit of a single source. Read More

The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias voltages. Spatially resolved I(V)-spectroscopy is performed to identify their energetic origin and behavior. Read More

2006Aug
Affiliations: 1Tata Institute of Fundamental Research, Mumbai, India, 2Tata Institute of Fundamental Research, Mumbai, India, 3Max Planck Research Group, Institute of Optics, Information and Photonics, University Erlangen-Nuremberg, Germany, 4Tata Institute of Fundamental Research, Mumbai, India

In this paper, we report on the photoelectronic properties of TPD studied in sandwich geometry. In particular, we have obtained from both forward and reverse bias measurements the "mew-tau" product for holes in TPD. "mew" is the hole mobility and "tau" the carrier trapping time. Read More

An importent question regarding the dissipation-less current carried by the edge states in a quantum Hall system is understanding the results of the electrodynamical interaction among the mobile electrons in the quantum mechanical limit under a magnetic field B. The interaction affects the transport parameters, the transverse electric field and the electron velocity. We have developed a new surface photovoltage spectroscopic technique to measure the parameters from the transition energies between the electron and heavy hole edge states. Read More

We study the transport of spin polarized electrons in n-GaAs using spatially resolved continuous wave Faraday rotation. From the measured steady state distribution, we determine spin relaxation times under drift conditions and, in the presence of strain, the induced spin splitting from the observed spin precession. Controlled variation of strain along [110] allows us to deduce the deformation potential causing this effect, while strain along [100] has no effect. Read More

The link between the inversion gain of quantum cascade structures and the Bloch gain in periodic superlattices is presented. The proposed theoretical model based on the density matrix formalism is able to treat the gain mechanism of the Bloch oscillator and Quantum cascade laser on the same footing by taking into account in-plane momentum relaxation. The model predicts a dispersive contribution in addition to the (usual) population-inversion-dependent intersubband gain in quantum cascade structures and - in the absence of inversion - provides the quantum mechanical description for the dispersive gain in superlattices. Read More

The effect of an external electric field F on the excitonic photoluminescence (PL) spectra of a symmetric coupled double quantum well (DQW) is investigated both theoretically and experimentally. We show that the variational method in a two-particle electron-hole wave function approximation gives a good agreement with measurements of PL on a narrow DQW in a wide interval of F including flat-band regime. The experimental data are presented for an MBE-grown DQW consisting of two 5 nm wide GaAs wells, separated by a 4 monolayers (MLs) wide pure AlAs central barrier, and sandwiched between Ga_{0. Read More

Electrical transport in semiconductor superlattices is studied within a fully self-consistent quantum transport model based on nonequilibrium Green functions, including phonon and impurity scattering. We compute both the drift velocity-field relation and the momentum distribution function covering the whole field range from linear response to negative differential conductivity. The quantum results are compared with the respective results obtained from a Monte Carlo solution of the Boltzmann equation. Read More