F. A. Bello

F. A. Bello
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F. A. Bello
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Physics - Instrumentation and Detectors (5)
 
High Energy Physics - Experiment (4)
 
Physics - Mesoscopic Systems and Quantum Hall Effect (3)
 
Physics - Materials Science (2)
 
Nuclear Theory (1)
 
Quantum Physics (1)

Publications Authored By F. A. Bello

2017May
Affiliations: 1Institut de Física d'Altes Energies, Barcelona, Spain, 2Institut de Física d'Altes Energies, Barcelona, Spain, 3Institut de Física d'Altes Energies, Barcelona, Spain, 4Département de Physique Nucléaire et Corpusculaire, University of Geneva, Geneva, Switzerland, 5Institut de Física d'Altes Energies, Barcelona, Spain, 6Institut de Física d'Altes Energies, Barcelona, Spain, 7Karlsruher Institut für Technologie, Karlsruhe, Germany, 8Institut de Física d'Altes Energies, Barcelona, Spain, 9Département de Physique Nucléaire et Corpusculaire, University of Geneva, Geneva, Switzerland, 10Département de Physique Nucléaire et Corpusculaire, University of Geneva, Geneva, Switzerland, 11University of Liverpool, Liverpool, United Kingdom

An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active pixel sensors built with the High Voltage CMOS (HV-CMOS) technology are investigated as an option to cover large areas in the outermost layers of the pixel detector and are especially interesting for the development of monolithic devices which will reduce the production costs and the material budget with respect to the present hybrid assemblies. For this purpose the H35DEMO, a large area HV-CMOS demonstrator chip, was designed by KIT, IFAE and University of Liverpool, and produced in AMS 350 nm CMOS technology. Read More

We study driven-dissipative Bose-Einstein condensates in a two-mode Josephson system, such as a double-well potential, with asymmetrical pumping. We investigate nonlinear effects on the condensate populations and mode transitions. The generalized Gross-Pitaevskii equations are modified in order to treat pumping of only a single mode. Read More

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between $1\cdot 10^{14}$ and $5\cdot 10^{15}$ 1-MeV-n$_\textrm{eq}$/cm$^2$. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Read More

A testbeam telescope, based on ATLAS IBL silicon pixel modules, has been built. It comprises six planes of planar silicon sensors with 250 x 50 um^2 pitch, read out by ATLAS FE-I4 chips. In the CERN SPS H8 beamline (180 GeV pi+) a resolution of better than 8 x 12 um^2 at the position of the device under test was achieved. Read More

High Voltage CMOS sensors are a promising technology for tracking detectors in collider experiments. Extensive R&D studies are being carried out by the ATLAS Collaboration for a possible use of HV-CMOS in the High Luminosity LHC upgrade of the Inner Tracker detector. CaRIBOu (Control and Readout Itk BOard) is a modular test system developed to test Silicon based detectors. Read More

Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown. Read More

This research focuses on a coherently driven four-level atomic medium with the aim of inducing a negative index of refraction while taking into consideration local field corrections as well as magnetoelectric cross coupling, i.e. chirality, within the material's response functions. Read More

Recently synthesis of superheavy nuclei has been achieved in hot fusion reactions. A systematic theoretical calculation of alpha decay half-lives in this region of the periodic system, may be useful in the identification of new nuclei in these type of reactions. Alpha decay half-lives are obtained in the framework of the barrier penetration theory, built with the use of proximity and Coulomb forces. Read More

Our model comprehensively simulates modern nanoscale semiconductor microcavities incorporating cavity quantum electrodynamics within both the weak and strong coupling regimes, using on-resonant laser excitation and nonresonant excitation due to a wetting layer. For weak coupling, the most significant effect is photon antibunching with nonresonant emission. We investigate how the antibunching characteristics change as the cavity finesse is increased towards the strong coupling regime. Read More

The four-level exciton/biexciton system of a single semiconductor quantum dot acts as a two qubit register. We experimentally demonstrate an exciton-biexciton Rabi rotation conditional on the initial exciton spin in a single InGaAs/GaAs dot. This forms the basis of an optically gated two-qubit controlled-rotation (CROT) quantum logic operation where an arbitrary exciton spin is selected as the target qubit using the polarization of the control laser. Read More

A single atom in a cavity is the model system of cavity quantum electrodynamics (CQED). The strong coupling regime between the atom and cavity-confined photon corresponds to the reversible exchange of energy between the two modes, and underpins a wide range of CQED phenomena with applications in quantum information science, including for example as quantum logic gates and as sources of entangled states. An important advance was achieved recently when strong coupling between excitons and cavity photons was reported for the first time for localized quantum dots (QDs) in micron-size solid state cavities. Read More