D. M. Phase

D. M. Phase
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Physics - Materials Science (14)
 
Physics - Strongly Correlated Electrons (4)
 
Physics - Chemical Physics (1)
 
Physics - Other (1)
 
Physics - Mesoscopic Systems and Quantum Hall Effect (1)

Publications Authored By D. M. Phase

Rashba spin-orbit splitting in the magnetic materials opens up a new perspective in the field of spintronics. Here, we report a giant Rashba-type spin-orbit effect on PrGe [010] surface in the paramagnetic phase with Rashba coefficient {\alpha}_R=5 eV{\AA}. Significant changes in the electronic band structure has been observed across the phase transitions from paramagnetic to antiferromagnetic (44 K) and from antiferromagnetic to the ferromagnetic ground state (41. Read More

Resonant photoemission spectroscopy has been used to investigate the character of Fe 3d states in FeAl alloy. Fe 3d states have two different character, first is of itinerant nature located very close to the Fermi level, and second, is of less itinerant (relatively localized character), located beyond 2 eV below the Fermi level. These distinct states are clearly distinguishable in the resonant photoemission data. Read More

Si-SiO2 multilayer nanocomposite (NCp) films, grown using pulsed laser deposition with varying Si deposition time are investigated using Raman spectroscopy/mapping for studying the variation of Si phonon frequency observed in these NCps. The lower frequency (LF) phonons (~ 495 - 510 cm-1) and higher frequency (HF) phonons (~ 515 - 519 cm-1) observed in Raman mapping data (Fig. 1A) in all samples studied are attributed to have originated from surface (Si-SiO2 interface) and core of Si nanocrystals, respectively. Read More

Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectra (XPS) of Nd doped phosphate glasses have been studied before and after gamma irradiation in order to find the behavior of chemical bonds, which decide the structural changes in the glass samples. IR absorption spectra of these glasses are found dominated mainly by the characteristics phosphate groups, water (OH) present in the glass network as well as on the composition of glass matrix. The effects of gamma irradiation are observed in the form of bond breaking and possible re-arrangement of the bonding in the glass. Read More

Valence band onset (Ev), valence band tail (VBT) and valence plasmons (VPs) have been studied as a function of sputtering of SnO2 and In2-xSnxO3 (ITO) thin films, using ultraviolet photoemission spectroscopy (UPS). Decrease in Ev with respect to the Fermi level and increase in the density of energy levels of VBT have been observed after 5 minutes of sputtering using Ar+ ions (500V). Bulk and surface components of VPs of Sn, SnO and SnO2 in sputtered SnO2 thin films have been observed in UPS spectra. Read More

For a detailed study on the semiconductor to metal transition (SMT) in ZnO thin films doped with Al in the concentration range from 0.02 to 2%, we grew these films on (0001) sapphire substrates using sequential pulsed laser deposition. It was found that the Al concentration in the films increased monotonically with the ratio of ablation durations of the Alumina and ZnO targets used during the deposition. Read More

Thin films of magnetite (Fe3O4) are grown on single crystal GaAs (100) substrate by pulsed laser deposition. X ray diffraction (XRD) result shows the (111) preferred orientation of the Fe3O4 film and x-ray photoelectron spectroscopy confirm the presence of single phase Fe3O4 in the film. The electrical transport property of the film shows the characteristic Verwey transition at 122 K and below 110 K, the transport follows variable range hopping type conduction mechanism. Read More

Thin films of Fe3O4 have been deposited on single crystal MgO (100) and Si (100) substrates using pulsed laser deposition. Films grown on MgO substrate are epitaxial with c-axis orientation whereas, films on Si substrate are highly <111> oriented. Film thicknesses are 150 nm. Read More

We report the growth of undoped and Fe (2 and 5 at. percentage) doped molybdenum oxide thin films on c-plane of sapphire substrate using pulsed laser ablation. X-ray diffraction results show that the films are oriented in (100) direction and have monoclinic structure based on MoO2 phase as also supported by Raman spectroscopy. Read More

The electronic structure of pulsed laser deposited Mo1-xFexO2 (x=0, 0.02 and 0.05) thin films has been investigated using resonant photoemission spectroscopy near Mo-4p absorption edge. Read More

The effect of substrate strain on the electronic valence band structure of La0.7Ca0.3MnO3 thin films has been investigated. Read More

The resistivity and magnetoresistance measurements were carried out on thin film of La0.7Ca0.3MnO3 to investigate the possible origin of low temperature resistivity minimum observed in these samples. Read More

Resonance Raman (RR) peaks of and stretching modes and their higher harmonics have been observed superimposed on photoluminescence (PL) spectrum of thin films. Commercial fluorine doped thin films deposited by sputtering on glass and thin films deposited on Si by laser ablation have been studied. The dispersions of CO and OH stretching RR modes are ~ 600 cm-1/eV and 800 cm-1 respectively. Read More

The effects of ion beam induced atomic mixing and subsequent thermal treatment in Si/C multilayer structures are investigated by use of the technique of grazing incidence X-ray diffraction (GIXRD) and Raman spectroscopy. The [Si (3.0 nm) / C (2. Read More